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Kategoria BISAC: Technology & Engineering >> Electronics - Transistors
ilość książek w kategorii: 130
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Modern Microwave Transistors : Theory, Design, and Performance
ISBN: 9780471417781 / Angielski / Twarda / 504 str. Termin realizacji zamówienia: ok. 25-30 dni roboczych.
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cena:
877,00 zł |
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HEMTs and HBTs: Devices, Fabrication, and Circuits
ISBN: 9780890064016 / Angielski / Twarda / 392 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologi...
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cena:
767,83 zł |
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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
ISBN: 9781420066852 / Angielski / Twarda / 264 str. Termin realizacji zamówienia: ok. 22-25 dni roboczych. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. The book covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. Drawing on the talents of an international panel of experts, additional topics include the mechanisms for carbon doping in SiGe HBTs,...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heter...
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cena:
742,94 zł |
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Fabrication of SiGe HBT BiCMOS Technology
ISBN: 9781420066876 / Angielski / Twarda / 264 str. Termin realizacji zamówienia: ok. 22-25 dni roboczych. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this book examines the design, fabrication, and application of silicon heterostructure transistors. Bringing together the scattered literature into a single source, the book focuses on SiGe HBT BiCMOS and Si/SiGe CMOS technologies. ''Snapshot'' views of the industrial state-of-the-art provide a basis of comparison for the current status and future course of the industry. Topics include materials, transistor optimization, fabrication, devices, structural innovations, modeling, and simulation, and potential...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this book examines the design, fabrication, and application of silico...
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cena:
742,94 zł |
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Silicon Heterostructure Devices
ISBN: 9781420066906 / Angielski / Twarda Termin realizacji zamówienia: ok. 22-25 dni roboczych. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text highlights the most mature and, not surprisingly, the most researched, silicon-based heterostructure devices. These are divided into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. Topics include device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes LEDS, near-infrared detectors, photonic...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text highlights the most mature and, not surprisingly, the most ...
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cena:
557,20 zł |
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Silicon-Germanium Heterojunction Bipolar Transistors
ISBN: 9781580533614 / Angielski / Twarda / 588 str. Termin realizacji zamówienia: ok. 22 dni roboczych. A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It cove...
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cena:
701,88 zł |
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Designing Bipolar Transistor Radio Frequency Integrated Circuits
ISBN: 9781596931282 / Angielski / Twarda / 317 str. Termin realizacji zamówienia: ok. 25-30 dni roboczych. Radio frequency integrated circuits (RFICs) are an important part of today's wireless communications devices and infrastructure. An RFIC design approach involving cutting-edge bipolar technologies (GaAs HBT or SiGe HBT) has gained popularity among engineers due to its ability to maximize performance; however, it has been largely ignored in professional reference books. This book fills the gap, offering practitioners a detailed treatment of this increasingly important topic. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures... to in-depth coverage of...
Radio frequency integrated circuits (RFICs) are an important part of today's wireless communications devices and infrastructure. An RFIC design approa...
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cena:
742,94 zł |
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Compact Hierarchical Bipolar Transistor Modeling With Hicum
ISBN: 9789814273213 / Angielski / Twarda / 752 str. Termin realizacji zamówienia: ok. 25-30 dni roboczych. Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe: C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into...
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling...
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cena:
806,62 zł |
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MOSFETs : Properties, Preparations & Performance
ISBN: 9781604567625 / Angielski / Twarda / 454 str. Termin realizacji zamówienia: ok. 25-30 dni roboczych. The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps...
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by...
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cena:
999,84 zł |
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Understanding Modern Transistors and Diodes
ISBN: 9780521514606 / Angielski / Twarda / 354 str. Termin realizacji zamówienia: ok. 18 dni roboczych. Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features:
- Rigorous theoretical treatment combined with practical detail - A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation - Covers MOSFETS, HBTs and HJFETS - Uses the PSP model for MOSFETS - Rigorous treatment of device capacitance - Describes the... Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a usefu...
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cena:
468,83 zł |
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Fundamentals of III-V Semiconductor MOSFETs
ISBN: 9781441915467 / Angielski / Twarda / 445 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides... Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide... |
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cena:
968,05 zł |
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Transistors : Types, Materials & Applications
ISBN: 9781616689087 / Angielski / Twarda / 198 str. Termin realizacji zamówienia: ok. 25-30 dni roboczych. Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transistors whose channels are made from semiconducting carbon nanomaterials.
Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transisto...
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cena:
1294,79 zł |
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Transistor Scaling: Volume 913 : Methods, Materials and Modeling
ISBN: 9781558998698 / Angielski / Twarda / 205 str. Termin realizacji zamówienia: ok. 16-20 dni roboczych. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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cena:
174,25 zł |
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Graphene & Carbon Nanotube Field Effect Transistors
ISBN: 9781613242766 / Angielski / Twarda Termin realizacji zamówienia: ok. 25-30 dni roboczych. Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices.
Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of gra...
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cena:
780,03 zł |
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Organic Light-Emitting Transistors : Towards the Next Generation Display Technology
ISBN: 9781118100073 / Angielski / Twarda / 288 str. Termin realizacji zamówienia: ok. 22-25 dni roboczych. Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This book discusses the scientific fundamentals and key technological features of Organic Light Emitting Transistors (OLETs) by putting them in the context of organic electronics and photonics. The characteristics of OLETs are benchmarked to those of OLEDs for applications in Flat Panel Displays and sensing technology. The authors provide a comparative analysis between OLED and OLET devices in order to highlight the fundamental differences in terms of... Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This b... |
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cena:
495,20 zł |
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Operation and Modeling of the MOS Transistor, Third Edtion International Edition
ISBN: 9780199829835 / Angielski / Twarda / 752 str. Termin realizacji zamówienia: ok. 22-25 dni roboczych. Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of thi...
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cena:
317,95 zł |
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Current Trends In Heterojunction Bipolar Transistors
ISBN: 9789810220976 / Angielski Termin realizacji zamówienia: ok. 25-30 dni roboczych. This volume in a series examining current topics in electronics and systems presents essays discussing heterojunction bipolar devices.
This volume in a series examining current topics in electronics and systems presents essays discussing heterojunction bipolar devices.
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cena:
597,70 zł |
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SOI Lubistors : Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors
ISBN: 9781118487907 / Angielski / Twarda / 320 str. Termin realizacji zamówienia: ok. 22-25 dni roboczych. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM... Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehe... |
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cena:
553,01 zł |
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Build Your Own Transistor Radios
ISBN: 9780071799706 / Angielski / Miękka / 473 str. Termin realizacji zamówienia: ok. 16-20 dni roboczych. A DIY guide to designing and building transistor radios Create sophisticated transistor radios that are inexpensive yet highly efficient. Build Your Own Transistor Radios: A Hobbyist's Guide to High-Performance and Low-Powered Radio Circuits offers complete projects with detailed schematics and insights on how the radios were designed. Learn how to choose components, construct the different types of radios, and troubleshoot your work. Digging deeper, this practical resource shows you how to engineer innovative devices by experimenting with and radically improving... A DIY guide to designing and building transistor radios Create sophisticated transistor radios that are inexpensive yet highly effici... |
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197,93 zł |
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Systematic Analysis of Bipolar and Mos Transistors
ISBN: 9780890066256 / Angielski / Twarda / 248 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.
Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor a...
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cena:
386,27 zł |
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