The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect...

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all...

• Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications.
• Authors are recognized experts with previous publications.
• Updated descriptions of state-of-the-art devices available on Wiley Web site.

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety...

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety...