SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

ISBN-13: 9781420066852 / Angielski / Twarda / 2008 / 264 str.

John D. Cressler

Opis

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. The book covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. Drawing on the talents of an international panel of experts, additional topics include the mechanisms for carbon doping in SiGe HBTs, contact metallization, and selective etching techniques for Si/SiGe.

Spis treści

Contents
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe and Si Strained-Layer Epitaxy
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si_1–yC_y Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon–Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
Index

O autorze

John D. Cressler