Silicon Heterostructure Devices

ISBN-13: 9781420066906 / Angielski / Twarda / 2007

John D. Cressler

Opis

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text highlights the most mature and, not surprisingly, the most researched, silicon-based heterostructure devices. These are divided into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. Topics include device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes LEDS, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters.

Spis treści

Contents
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe HBTs
Overview: SiGe HBTs; J.D. Cressler
Device Physics; J.D. Cressler
Second-Order Effects; J.D. Cressler
Low-Frequency Noise; G. Niu
Broadband Noise; D.R. Greenberg
Microscopic Noise Simulation; G. Niu
Linearity; G. Niu
pnp SiGe HBTs; J.D. Cressler
Temperature Effects; J.D. Cressler
Radiation Effects; J.D. Cressler
Reliability Issues; J.D. Cressler
Self-Heating and Thermal Effects; J-S. Rieh
Device-Level Simulation; G. Niu
SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg
Heterostructure FETs
Overview: Heterostructure FETs; J.D. Cressler
Biaxial Strained Si CMOS; K. Rim
Uniaxial Stressed Si MOSFET; S.E. Thompson
SiGe-Channel HFETs; S. Banerjee
Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson
Other Heterostructure Devices
Overview: Other Heterostructure Devices; J.D. Cressler
Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser
IMPATT Diodes; E. Kasper and M. Oehme
Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald
Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull
Optoelectronic Components
Overview: Optoelectronic Components; J.D. Cressler
Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim
Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto
Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving
Si–SiGe Quantum Cascade Emitters; D.J. Paul
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi

O autorze

John D. Cressler