ilość książek w kategorii: 160
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Silicon-Germanium Heterojunction Bipolar Transistors
ISBN: 9781580533614 / Angielski / Twarda / 588 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It cove...
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cena:
694,44 |
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Low Power and Low Voltage Circuit Design with the Fgmos Transistor
ISBN: 9780863416170 / Angielski / Twarda / 320 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book demonstrates how FGMOS transistors can be used in a low-voltage and low-power design context. The techniques used provide innovative solutions, often in situations where the limits of technology in question have been pushed far below the values recommended by the manufacturer.
This book demonstrates how FGMOS transistors can be used in a low-voltage and low-power design context. The techniques used provide innovative solutio...
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cena:
576,26 |
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Matching Properties of Deep Sub-Micron Mos Transistors
ISBN: 9780387243146 / Angielski / Twarda / 206 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the... Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stocha... |
cena:
609,48 |
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Compact Hierarchical Bipolar Transistor Modeling with Hicum
ISBN: 9789814273213 / Angielski / Twarda / 752 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe: C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into...
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling...
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cena:
1192,21 |
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MOSFETs: Properties, Preparations & Performance
ISBN: 9781604567625 / Angielski / Twarda / 454 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps...
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by...
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cena:
859,34 |
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Fundamentals of III-V Semiconductor MOSFETs
ISBN: 9781441915467 / Angielski / Twarda / 464 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides... Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide... |
cena:
609,48 |
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Electronic Amplifiers and Circuit Design (Analog Electronics Series)
ISBN: 9781934939611 / Angielski / Miękka / 162 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Discussing problems and solutions, this edition focuses on types of amplifiers and design factors that affect bandwidth and frequency response, types of coupling including electronic networks and transformers, impedance considerations, and other important considerations.
Discussing problems and solutions, this edition focuses on types of amplifiers and design factors that affect bandwidth and frequency response, types ...
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cena:
143,10 |
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Transistors: Types, Materials & Applications
ISBN: 9781616689087 / Angielski / Twarda / 198 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transistors whose channels are made from semiconducting carbon nanomaterials.
Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transisto...
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cena:
1167,33 |
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Nano-CMOS Gate Dielectric Engineering
ISBN: 9781439849590 / Angielski / Twarda / 248 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book is a systematic review of high-K gate dielectric materials for CMOS chips (complementary metaloxide semiconductors), which are used in image sensors and data convertors (amplifiers, digital camera sensors, etc). Scaling CMOS devices down to the nanoscale creates new materials challenges, and one effective response is to introduce novel materials such as High K dielectrics. The book presents the fundamental physics and properties of High-K materials and how they can be fabricated and used in Nano CMOS devices. This book is a systematic review of high-K gate dielectric materials for CMOS chips (complementary metaloxide semiconductors), which are used in im... |
cena:
620,95 |
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MicroCMOS Design
ISBN: 9781439818954 / Angielski / Twarda / 434 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design examples to illustrate circuit design so that readers can develop an intuitive rather than conventional analytic understanding. System-level knowledge is built upon understanding fundamental concepts of noise, jitter, and frequency and phase noise. This material addresses basic abstract concepts of transistor circuits, as well as advanced topics such as ADCs and PLLs, providing a proper perspective on this advanced SoC design. Other topics...
Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design e...
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cena:
1167,38 |
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Nonlinear Transistor Model Parameter Extraction Techniques
ISBN: 9780521762106 / Angielski / Twarda / 366 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
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cena:
585,15 |
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Frontiers in Electronics - Proceedings of the Workshop on Frontiers in Electronics 2009
ISBN: 9789814383714 / Angielski / Twarda / 240 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. "Frontiers in Electronics" is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and, wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
"Frontiers in Electronics" is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CM...
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cena:
452,05 |
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Applications of Silicon-Germanium Heterostructure Devices
ISBN: 9780750307239 / Angielski / Twarda / 402 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of heterojunction transistors, and their relevance in developing the technologies involving strained layers, device design and simulation of coventional silicon bipolar transistors and SiGe HBTs at room and low temperatures, device design and simulation for MOSEFETs, including SiGe and strained-Si channel MOSEFETs. It concludes with simulations and examples for different applications.
This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of het...
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cena:
1366,08 |
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Transistor Scaling: Volume 913: Methods, Materials and Modeling
ISBN: 9781558998698 / Angielski / Twarda / 205 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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cena:
156,89 |
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Graphene & Carbon Nanotube Field Effect Transistors
ISBN: 9781613242766 / Angielski / Twarda Termin realizacji zamówienia: ok. 5-8 dni roboczych. Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices.
Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of gra...
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cena:
705,34 |
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Strain-Engineered Mosfets
ISBN: 9781466500556 / Angielski / Twarda / 320 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book... Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect... |
cena:
695,46 |
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Organic Light-Emitting Transistors: Towards the Next Generation Display Technology
ISBN: 9781118100073 / Angielski / Twarda / 288 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This book discusses the scientific fundamentals and key technological features of Organic Light Emitting Transistors (OLETs) by putting them in the context of organic electronics and photonics. The characteristics of OLETs are benchmarked to those of OLEDs for applications in Flat Panel Displays and sensing technology. The authors provide a comparative analysis between OLED and OLET devices in order to highlight the fundamental differences in terms of... Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This b... |
cena:
564,47 |
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High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS
ISBN: 9781441995384 / Angielski / Twarda / 146 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.
This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers ... |
cena:
406,31 |
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Operation and Modeling of the MOS Transistor, Third Edtion International Edition
ISBN: 9780199829835 / Angielski / Twarda / 752 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of thi...
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cena:
1192,19 |
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CMOS Voltage References: An Analytical and Practical Perspective
ISBN: 9781118275689 / Angielski / Twarda / 304 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits. The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,... A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits. The de... |
cena:
574,93 |