Applications of Silicon-Germanium Heterostructure Devices

ISBN-13: 9780750307239 / Angielski / Twarda / 2001 / 402 str.

Opis

This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of heterojunction transistors, and their relevance in developing the technologies involving strained layers, device design and simulation of coventional silicon bipolar transistors and SiGe HBTs at room and low temperatures, device design and simulation for MOSEFETs, including SiGe and strained-Si channel MOSEFETs. It concludes with simulations and examples for different applications.

Recenzje

"The authors have certainly identified a gap in the literature … Overall, the book is very informative and provides a strong foundation for work in this active research area."
-K. Alan Shore, Optics and Photonics News

Spis treści

Introduction
Film Growth and Material Parameters
Principles of SiGe-HBTs
Design of SiGe-HBTs
Simulation of SiGe-HBTs
Strained-Si Heterostructure FETs
SiGe Heterostructure Schottky Diodes
SiGe Optoelectronic Devices
RF Applications of SiGe-HBTs

O autorze

C.K Maiti, G.A Armstrong