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Kategoria BISAC: Technology & Engineering >> Electronics - Transistors
ilość książek w kategorii: 155
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Advanced Field Effect Transistor
ISBN: 9781032493800 / Twarda / 344 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) |
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647,13 zł |
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Basics of Digital Electronics
ISBN: 9781032567556 / Twarda / 258 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) |
cena:
439,99 zł |
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Modern Microwave Transistors: Theory, Design, and Performance
ISBN: 9780471417781 / Angielski / Twarda / 504 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami)
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cena:
942,49 zł |
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Mosfet Modeling & Bsim3 User's Guide
ISBN: 9780792385752 / Angielski / Twarda / 462 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools.
In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the... Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. ...
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cena:
767,51 zł |
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Characterization Methods for Submicron Mosfets
ISBN: 9780792396956 / Angielski / Twarda / 232 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen- eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena...
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that th...
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cena:
575,62 zł |
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Thin-Film Transistors
ISBN: 9780824709594 / Angielski / Twarda / 544 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays. It evaluates the preparation of polycrystalline silicon TFTs for applications in cameras, video recorders, PDAs, and cell phones. The authors provide an introduction to the technology, a historical overview of its development, and a discussion of the characteristics and applications of TFT... This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple di... |
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1294,26 zł |
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High Electron Mobility Transistors and Heterojunction Bipolar Transistors: Devices, Fabrication and Circuits
ISBN: 9780890064016 / Angielski / Twarda / 392 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologi...
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cena:
828,93 zł |
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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
ISBN: 9781420066852 / Angielski / Twarda / 264 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. The book covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. Drawing on the talents of an international panel of experts, additional topics include the mechanisms for carbon doping in SiGe HBTs,...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heter...
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cena:
802,44 zł |
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Fabrication of SiGe HBT BiCMOS Technology
ISBN: 9781420066876 / Angielski / Twarda / 264 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this book examines the design, fabrication, and application of silicon heterostructure transistors. Bringing together the scattered literature into a single source, the book focuses on SiGe HBT BiCMOS and Si/SiGe CMOS technologies. ''Snapshot'' views of the industrial state-of-the-art provide a basis of comparison for the current status and future course of the industry. Topics include materials, transistor optimization, fabrication, devices, structural innovations, modeling, and simulation, and potential...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this book examines the design, fabrication, and application of silico...
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cena:
802,44 zł |
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Silicon Heterostructure Devices
ISBN: 9781420066906 / Angielski / Twarda Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text highlights the most mature and, not surprisingly, the most researched, silicon-based heterostructure devices. These are divided into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. Topics include device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes LEDS, near-infrared detectors, photonic...
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text highlights the most mature and, not surprisingly, the most ...
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cena:
543,59 zł |
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Silicon-Germanium Heterojunction Bipolar Transistors
ISBN: 9781580533614 / Angielski / Twarda / 588 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe.
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It cove...
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cena:
566,75 zł |
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Compact Hierarchical Bipolar Transistor Modeling with Hicum
ISBN: 9789814273213 / Angielski / Twarda / 752 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe: C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into...
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling...
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cena:
1242,49 zł |
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MOSFETs: Properties, Preparations & Performance
ISBN: 9781604567625 / Angielski / Twarda / 454 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps...
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by...
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cena:
895,58 zł |
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Understanding Modern Transistors and Diodes
ISBN: 9780521514606 / Angielski / Twarda / 354 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features:
- Rigorous theoretical treatment combined with practical detail - A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation - Covers MOSFETS, HBTs and HJFETS - Uses the PSP model for MOSFETS - Rigorous treatment of device capacitance - Describes the... Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a usefu...
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cena:
374,09 zł |
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Electronic Amplifiers and Circuit Design (Analog Electronics Series)
ISBN: 9781934939611 / Angielski / Miękka / 162 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Discussing problems and solutions, this edition focuses on types of amplifiers and design factors that affect bandwidth and frequency response, types of coupling including electronic networks and transformers, impedance considerations, and other important considerations.
Discussing problems and solutions, this edition focuses on types of amplifiers and design factors that affect bandwidth and frequency response, types ...
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cena:
155,58 zł |
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Fundamentals of III-V Semiconductor MOSFETs
ISBN: 9781441915467 / Angielski / Twarda / 464 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides... Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide... |
cena:
575,62 zł |
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Transistors: Types, Materials & Applications
ISBN: 9781616689087 / Angielski / Twarda / 198 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transistors whose channels are made from semiconducting carbon nanomaterials.
Transistors play a central role in many electronic circuits. This book reviews research in the field of transistors including a new class of transisto...
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cena:
1216,55 zł |
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Transistor Scaling: Volume 913: Methods, Materials and Modeling
ISBN: 9781558998698 / Angielski / Twarda / 205 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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cena:
158,29 zł |
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Graphene & Carbon Nanotube Field Effect Transistors
ISBN: 9781613242766 / Angielski / Twarda Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices.
Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of gra...
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cena:
735,08 zł |
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Organic Light-Emitting Transistors: Towards the Next Generation Display Technology
ISBN: 9781118100073 / Angielski / Twarda / 288 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych (dostawa przed świętami) Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This book discusses the scientific fundamentals and key technological features of Organic Light Emitting Transistors (OLETs) by putting them in the context of organic electronics and photonics. The characteristics of OLETs are benchmarked to those of OLEDs for applications in Flat Panel Displays and sensing technology. The authors provide a comparative analysis between OLED and OLET devices in order to highlight the fundamental differences in terms of... Provides an overview of the developments and applications of Organic Light Emitting Transistors (OLETs) science and technology This b... |
cena:
588,27 zł |
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