ilość książek w kategorii: 1612
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Semiconductors: Part I
ISBN: 9781461384090 / Angielski / Miękka / 154 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering workstations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such modeling. This two-volume set covers three topic areas: process modeling and circuit simulation in Volume I and device modeling in Volume II. Process modeling provides the geometry...
Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microproc...
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cena:
523,30 |
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Semiconductors: Part II
ISBN: 9781461384120 / Angielski / Miękka / 406 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor...
This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Ou...
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cena:
402,53 |
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New Data and Updates for Several III-V (Including Mixed Crystals) and II-VI Compounds: Condensed Matter, Semiconductors Update, Subvolume E
ISBN: 9783642234149 / Angielski / Twarda / 240 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The Landolt-Bornstein subvolume III/44E is the fifth part of an update to the existing eight volumes III/41 about Semiconductors and contains New Data and Updates for III-V, and II-VI compounds and their mixed crystals. Each compound is described with respect to its properties, the corresponding references are provided."
The Landolt-Bornstein subvolume III/44E is the fifth part of an update to the existing eight volumes III/41 about Semiconductors and contains New Data...
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cena:
2012,81 |
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Insulating Films on Semiconductors: Proceedings of the Second International Conference, Infos 81, Erlangen, Fed. Rep. of Germany, April 27-29, 1981
ISBN: 9783642682490 / Angielski / Miękka / 318 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The...
The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. Th...
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cena:
402,53 |
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Ion Implantation in Semiconductors: Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fun
ISBN: 9783642806629 / Angielski / Miękka / 508 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on...
In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would b...
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cena:
402,53 |
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Film Deposition by Plasma Techniques
ISBN: 9783642845130 / Angielski / Miękka / 224 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and- error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under- standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter...
Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition...
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cena:
201,24 |
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Topological Insulators: Dirac Equation in Condensed Matters
ISBN: 9783642328572 / Angielski / Twarda / 225 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, the first of its kind on topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these... Topological insulators are insulating in the bulk, but process metallic states present around its boundary owing to the topological origin of the b... |
cena:
644,07 |
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Electron Spectrum of Gapless Semiconductors
ISBN: 9783642643910 / Angielski / Miękka / 249 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.
A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are ve...
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cena:
402,53 |
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Properties of Indium Phosphide
ISBN: 9780863416422 / Angielski / Miękka / 520 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.
Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over...
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cena:
1233,12 |
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Properties of Wide Bandgap II-VI Semiconductors
ISBN: 9780863416439 / Angielski / Miękka / 264 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Semiconductors comprising elements from groups II and VI of the periodic table and having a large energy gap (e g ZnSe) are generating intense R&D activity world-wide largely as a result of their blue green diodes. To review the accumulating knowledge and provide an up-to-date state-of-the-art picture 34 scientists from leading research groups in the USA, Europe and Japan have pooled their knowledge under the editorship of Dr. Bhargava. The book is illustrated, structured for reference and deeply indexed.
Semiconductors comprising elements from groups II and VI of the periodic table and having a large energy gap (e g ZnSe) are generating intense R&D act...
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cena:
1078,98 |
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Solid Surfaces, Interfaces and Thin Films
ISBN: 9783642264863 / Angielski / Miękka / 580 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Solid Surfaces, Interfaces and Thin Films examines both experimental and theoretical aspects of surface, interface and thin film physics. Coverage of magnetic thin films has been expanded, and now includes giant magnetoresistance and the spin-transfer torque mechanism.
Solid Surfaces, Interfaces and Thin Films examines both experimental and theoretical aspects of surface, interface and thin film physics. Coverage of ...
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cena:
319,73 |
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Plasma Charging Damage
ISBN: 9781447110620 / Angielski / Miękka / 346 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.
Drawing on the... This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. I...
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cena:
805,10 |
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Silizium-Planartechnologie: Grundprozesse, Physik Und Bauelemente
ISBN: 9783519004677 / Niemiecki / Miękka / 212 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Die Grundlagen der Mikroelektronik werden kompakt und in leicht verstandlicher Form vorgestellt. Der Leser erfahrt, wie integrierte Schaltkreise hergestellt werden, wie sie funktionieren und welche Bauelemente sich realisieren lassen."
Die Grundlagen der Mikroelektronik werden kompakt und in leicht verstandlicher Form vorgestellt. Der Leser erfahrt, wie integrierte Schaltkreise herge...
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cena:
142,92 |
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Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 9789401072946 / Angielski / Miękka / 554 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and...
Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by th...
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cena:
1207,67 |
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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
ISBN: 9781118313527 / Angielski / Twarda / 400 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicat... |
cena:
623,55 |
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High Mobility and Quantum Well Transistors: Design and TCAD Simulation
ISBN: 9789400763395 / Angielski / Twarda / 140 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such m...
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cena:
402,53 |
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Handbook of Gas Sensor Materials: Properties, Advantages and Shortcomings for Applications Volume 1: Conventional Approaches
ISBN: 9781461471646 / Angielski / Twarda / 442 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The two volumes of Handbook of Gas Sensor Materials provide a detailed and comprehensive account of materials for gas sensors, including the properties and relative advantages of various materials. Since these sensors can be applied for the automation of myriad industrial processes, as well as for everyday monitoring of such activities as public safety, engine performance, medical therapeutics, and in many other situations, this handbook is of great value. Gas sensor designers will find a treasure trove of material in these two books.
The two volumes of Handbook of Gas Sensor Materials provide a detailed and comprehensive account of materials for gas sensors, including the propertie...
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cena:
805,10 |
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Metal-Semiconductor Schottky Barrier Junctions and Their Applications
ISBN: 9781468446579 / Angielski / Miękka / 386 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal- semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was...
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by ...
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cena:
442,79 |
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Nitride Semiconductors and Devices
ISBN: 9783642636479 / Angielski / Miękka / 489 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn- thesized more than 50 years ago by Johnson et al. 1] in 1932, and also by Juza and Hahn 2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as...
A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the...
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cena:
805,10 |
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Advanced Physical Models for Silicon Device Simulation
ISBN: 9783709173343 / Angielski / Miękka / 354 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application...
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions...
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cena:
603,81 |