The Landolt-Bornstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties," which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make...
The Landolt-Bornstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.
Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same pr...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features within these rules because of those properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.
Physics and Properties of Narrow Gap Semiconductors offers clear descriptions of crystal growth, material science, and device physics of these unique...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features within these rules because of those p...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.
Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same pr...
The Landolt-Bornstein subvolume III/44E is the fifth part of an update to the existing eight volumes III/41 about Semiconductors and contains New Data and Updates for III-V, and II-VI compounds and their mixed crystals. Each compound is described with respect to its properties, the corresponding references are provided."
The Landolt-Bornstein subvolume III/44E is the fifth part of an update to the existing eight volumes III/41 about Semiconductors and contains New Data...
