This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such m...
Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization,...
Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical ...
This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such m...
Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 � �m Cu-backend CMOS.
Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes throug...
