ISBN-13: 9780863416422 / Angielski / Miękka / 1990 / 520 str.
Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.