Kategoria BISAC: Technology & Engineering >> Electronics - Microelectronics

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

The Definitive Guide to the ARM(R) Cortex(R)-M0 and Cortex-M0+ Processors, Second Edition explains the architectures underneath ARM's Cortex-M0 and Cortex-M0+ processors and their programming techniques.

Written by ARM's Senior Embedded Technology Manager, Joseph Yiu, the book is packed with examples on how to use the features in the Cortex-M0 and Cortex-M0+ processors. It provides detailed information on the instruction set architecture, how to use a number of popular development suites, an overview of the software development flow, and information on how to locate problems...

• Contains contributions from leading authorities in the study of solid state physics, especially at the atomic level
• Informs and updates on all the latest developments in the field
• presents timely and state-of-the-art reviews pertaining to all aspects of solid state...

Single-molecule electronics has evolved as a vibrant research field during the last two decades. The vision is to be able to create electronic components at the highest level of miniaturization the single molecule. This book compiles and details cutting-edge research with contributions from chemists, physicists, theoreticians, and engineers. It covers all aspects of single-molecule electronics, from the theory through experimental realizations and the chemical synthesis of molecular components to the implementation of molecular components in future integrated circuits.

This book...

This book is focused on the spintronic properties of III V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin...

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III V semiconductor IC processing. The book s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing,...

"a very detailed book on multiferroics that will be useful for PhD students and researchers interested in this emerging field of materials science"

Multiferroics has emerged as one of the hottest topics in solid state physics in this millennium. The coexistence of multiple ferroic/antiferroic properties makes them useful both for fundamental studies and practical applications such as revolutionary new memory technologies and next-generation spintronics devices. This book provides an historical...

Recent advances in semiconductor technology offer vertical interconnect access (via) that extend through silicon, popularly known as through silicon via (TSV). This book provides a comprehensive review of the theory behind TSVs while covering most recent advancements in materials, models and designs. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for Cu, carbon nanotube (CNT) and graphene nanoribbon (GNR) based TSVs are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR based...

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with...

This in-depth, detailed reference presents for the first time a comprehensive treatment of recent advances in optical performance monitoring. Written by leading experts in the field, the book provides an overview of recent developments in the area and the role of OPM in future optical systems and networks. Detailed discussions of various advanced techniques are provided to illustrate their principles.

FEATURES:

• Presents the principles and applications of advanced OPM techniques, together with a comparative evaluation of their effectiveness in monitoring individual...

Solid State Physics, Volume 68 provides the latest information on a branch of physics that is primarily devoted to the study of matter in its solid phase, especially at the atomic level. Chapters in this updated volume include new research in the use of phonon-polaritons in polar materials to do plasmonic like studies, but without the plasmons, along with a section on Polar oxide interfaces. This prestigious serial presents timely and state-of-the-art reviews pertaining to all aspects of solid state physics.

• Contains contributions from leading authorities in the...

The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such...

This book is a reference for researchers who want to learn about resonant periodic structures for applications in microstrip circuits. The readers can learn simple methods to analyze these structures using commercially available software and equivalent circuit modelling. The application examples demonstrated in the book will open up new research ideas in this field.

Logarithmic Image Processing: Theory and Applications, the latest volume in the series that merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy and features cutting-edge articles on recent developments in all areas of microscopy, digital image processing, and many related subjects in electron physics.

• Merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy into a single volume
• Contains the...

Advances in Imaging and Electron Physics, Volume 200, the latest release in a series that merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and computing methods. Topics in this latest release include Past and Present Attempts to Attain the...

The increasing demand for extremely high-data-rate communications has urged researchers to develop new communication systems. Currently, wireless transmission with more than one Giga-bits-per-second (Gbps) data rates is becoming essential due to increased connectivity between different portable and smart devices. To realize Gbps data rates, millimeter-wave (MMW) bands around 60 GHz is attractive due to the availability of large bandwidth of 9 GHz.

Recent research work in the Gbps data rates around 60 GHz band has focused on short-range indoor applications, such as...

This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. This book offers an innovative and new approach toward the teaching of the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics--semiconductors, with their variable densities and effective masses.

The author develops Green's...