Nitride Wide Bandgap Semiconductor Material and Electronic Devices

ISBN-13: 9781498745123 / Angielski / Twarda / 2016 / 392 str.

Yue Hao; Jin Feng Zhang

Opis

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Spis treści

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

O autorze

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.