This work deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, characterization, materials and device issues.

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal...

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Part I begins with time-resolved studies of semiconductors and moves...

This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
Part II consists of chapters with emphasis on the optical...

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications.
This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple...

This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers.
The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral...

Since first coming into existence in the early 90s, the vertical-cavity surface-emitting laser (VCSEL) has made several quantum leaps in performance. The performance of VCSELs now exceeds that of edge-emitting lasers in many respects, and offers a superior optical beam and much easier monolithic integrability. As the VCSEL technology improves further, and their number and variety multiply, their potential applications will likely expand at a rapid pace. Vertical-cavity Surface-Emitting Lasers: Technology and Applications addresses two main objectives. It provides the researcher and device...

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping,...

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.