The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Part I begins with time-resolved studies of semiconductors and moves...

This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers.
The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral...

Advances in the growth of novel-engineered structures such as sophisticated semiconductor superlattices and heterostructures, as well as new nonlinear optical materials, have opened exciting possibilities for infrared sources, detectors, modulators and novel devices. Brought to maturity, such discrete devices could likely see widespread use in applications as diverse as infrared imaging, chemical sensing, surveillance, short-link and high-bandwidth communications. This book published by MRS, brings together a group of internationally recognized experts in the field to discuss progress in...