Metal Impurities in Silicon- And Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact

ISBN-13: 9783319939247 / Angielski / Twarda / 2018 / 438 str.

Cor Claeys; Eddy Simoen

Opis

material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Spis treści

Preface
List of Symbols             
List of Greek Symbols                 
List of Acronyms                                                                                               

1.                   Introduction

References

2.                   Basic Properties of Metals in Semiconductors (20 p) 

2.1                 Diffusivity

2.2                 Solubility

2.3                 Segregation

2.4                  Precipitation and Gettering

2.5                 Electrical Properties

2.5.1        Shockley Read Hall Model

2.5.2           Activation Energy

2.5.3           Lifetime and capture cross-section

2.5.4           Leakage current

References

3.                  Sources of Metals in Si and Ge Processing (40 p)

3.1            Crystal Growth

3.1.1        Micro-electronics grade crystalline substrates

3.1.2        Substrates for PV applications

3.2              Wafer Handling

3.3               Wafer Cleaning

3.4              Lithography and Patterning

3.4.1        Resist Processing and Stripping

3.4.2        Wet Etching

3.4.3        Dry Etching

3.5              Ion Implantation

3.6        Thermal Processing

3.6.1         Diffusion processes

3.6.2         Gate Dielectrics

3.6.3         Deposition Techniques

3.7              Silicidation and Metallization

3.8              Chemical Mechanical Polishing

3.9              Through Silicon Vias Processing

References

4.              Characterization and Detection of Metals in Silicon and Germanium (30 p)

4.1           Chemical Techniques

4.1.1.       Electron Spin Resonanc<

4.1.2.       SIMS and TOFSIMS

4.1.3.        X-ray analysis (TXRF/EDX)

4.1.4.         Neutron Activation Analysis

4.1.5.         Structural Charactization (precipitates):

4.2.1           Scanning and transmission Electron Microscopy (SEM –TEM)

4.2.2           Optical Spectroscopy (AFM) & Defect Etching  (haze test)

4.2.3            Scanning PL technique

4.3                 Electrical Characterization

4.3.1              Hall Effect versus Temperature

4.3.2              Deep-Level Transient Spectroscopy (DLTS);

4.3.3               Lifetime Measurements

4.3.3.1  MOS Zerbst Technique

4.3.3.2   Surface Photo Voltage (SPV)

4.3.3.3  Microwave Absorption Analysis (MWA)

4.3.3.4  Electrolytic Methods (Elymat)

4.3.3.5  Ion drift studies

4.4                 Metal Contamination analysis methodology

References

5.      Electrical activity of Metals in Si and Ge (50 p)

5.1                    Properties of Fe (DLTS levels and lifetime)

5.2                    Properties of Cu

5.3                    Properties of Ni

5.4                    Properties of other TM (Ti, Co, Cr, Mn,..)

5.5                    Properties of Au, Pt and Ag

5.6                    Properties of Refractory Metals (Mo, W,…)

5.7                    Properties of Rare Earths

References

6.      Impact of metals on silicon devices and circuits (30 p)

 

6.1            P-n junction leakage and Lifetime Control

6.2            MOS Interface States and Dielectric Breakdown

6.3            Reliability Aspects

6.4            Charge Coupled Devices (CCDs) and CMOS Imagers

6.5            Solar Cell Efficiency

6.6            Impact on Circuit Yield

References

7.      Gettering and Passivation of Metals in Silicon and Germanium (30 p)

7.1            Gettering Strategies 

7.4             Back Damage Gettering

                  7.4.1   Mechanical Stress (poly-Si, Si₃N₄, sandblasting, high doping layer)

                  7.4.2   Ion Implantation

7.5             Front Side Gettering

                  7.5.1   Ion Implantation

                  7.5.2   Proximity Gettering

                  7.5.3   Nano Cavities

7.6             Al Gettering

7.7             Hydrogen Passivation of Metals

References

8.      Modeling and Simulation of Metals in Silicon and Germanium (15 p)

8.1             First Principles Analysis

8.2.            Density Functional Theory (DFT)

8.3             Modeling/Simulation Metals

8.4             Gettering Simulation

References

Conclusions

O autorze

Cor Claeys is a Professor at the KU Leuven (Belgium) since 1990. He was at imec, Leuven, Belgium from 1984 till 2016. His main interests are silicon technology, device physics, low-frequency noise phenomena, radiation effects, defect engineering and material characterization. He has co-edited a book on “Low Temperature Electronics” and “Germanium-Based Technologies: From Materials to Devices” and co-authored monographs on “Radiation Effects in Advanced Semiconductor Materials and Devices,” “Fundamental and Technological Aspects of Extended Defects in Germanium” and “Random Telegraph Signals in Semiconductor Devices.” He (co)authored 15 book chapters, over 1100 conference presentations and more than 1300 technical papers. He is editor/co-editor of 60 Conference Proceedings. Prof. Claeys is a Fellow of the Electrochemical Society and of the IEEE. He was Founder of the IEEE Electron Devices Benelux Chapter, Chair of the IEEE Benelux Section, elected Board of Governors  Member of the Electron Devices Society and the EDS Vice President for Chapters and Regions. He was EDS President in 2008-2009 and Division Director on the IEEE Board of Directors in 2012-2013. He is a recipient of the IEEE Third Millennium Medal and received the IEEE EDS Distinguished Service Award.

Within the Electrochemical Society, he was the Chair of the Electronics & Photonics Division from 2001 to 2003. In 2004, he received the Electronics and Photonics Division Award. In 2016 he received the Semi China Special Recognition Award  for outstanding involvement in the China Semiconductor Technology International Conference (CSTIC).

 

Eddy Simoen obtained his Bachelor’s (1976–1978) and Master’s degrees in Physics Engineering (1978–1980), as well as his Ph.D. in Engineering (1985), from Ghent University (Belgium). He is currently a Specialist at imec (Leuven, Belgium), involved in the study of defect and strain engineering in high-mobility and epitaxial substrates and defect studies in germanium and III–V compounds (AlN; GaN, InP, etc). Another current focus point is the study of 1-transistor memories based on bulk FinFET and Ultra-thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI), using low-frequency noise. In 2013, he was appointed a part-time Professor at Ghent University. He is a member of the IEEE and ECS and became an ECS Fellow in 2016. 

In these fields, he has (co-) authored over 1500 Journal and Conference papers, 12 book chapters and a monograph on Radiation Effects in Advanced Semiconductor Devices and Materials (Springer, 2002). He was also a co-editor of the book on Germanium-based Technologies – from Materials to Devices (Elsevier March 2007; Chinese translation 2010). Another book on the “Fundamental and Technological Aspects of Extended Defects in Germanium” was published by Springer in January 2009. In 2016 he published “Random Telegraph Signals in Semiconductor Devices” with IOP. He is also a co-inventor of two patents.

Blurb

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. 

The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.