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Kategoria BISAC: Technology & Engineering >> Electronics - Transistors
ilość książek w kategorii: 153
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Electronics For Absolute Beginners: A Beginner's Guide To Understanding Electronics
ISBN: 9798850078553 / Angielski Termin realizacji zamówienia: ok. 5-8 dni roboczych. |
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50,28 zł |
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Advanced Field Effect Transistor
ISBN: 9781032493800 / Twarda / 344 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. |
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649,62 zł |
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Mosfet Theory and Design
ISBN: 9780195116427 / Angielski / Miękka / 272 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the... Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment o...
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823,55 zł |
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Crystal Fire: The Invention of the Transistor and the Birth of the Information Age (Revised)
ISBN: 9780393318517 / Angielski / Miękka / 366 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. On December 16, 1947, John Bardeen and Walter Brattain, physicists at Bell Laboratories, jabbed two electrodes into a sliver of germanium. The power flowing from the germanium far exceeded what went in; in that moment the transistor was invented and the Information Age was born. No other devices have been as crucial to modern life as the transistor and the microchip it spawned, but the story of the science and personalities that made these inventions possible has not been fully told until now. Crystal Fire fills this gap and carries the story forward. William Shockley, Bell Labs' team leader...
On December 16, 1947, John Bardeen and Walter Brattain, physicists at Bell Laboratories, jabbed two electrodes into a sliver of germanium. The power f...
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cena:
108,72 zł |
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Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction
ISBN: 9780412146015 / Angielski / Twarda / 349 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all...
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectru...
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cena:
583,65 zł |
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Sige Heterojunction Bipolar Transistors
ISBN: 9780470848388 / Angielski / Twarda / 272 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.
The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features:
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio fre...
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cena:
678,07 zł |
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Insulated Gate Bipolar Transistor Igbt Theory and Design
ISBN: 9780471238454 / Angielski / Twarda / 648 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
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cena:
940,65 zł |
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Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts
ISBN: 9780471297000 / Angielski / Twarda / 520 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. A systematic, accessible introduction to III–V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III–V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III–V devices—heterojunction bipolar transistors...
A systematic, accessible introduction to III–V semiconductor devices With this handy book, readers seeking to understand semiconductor devices ba...
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cena:
1028,18 zł |
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Principles of Transistor Circuits
ISBN: 9780750644273 / Angielski / Miękka / 416 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them at the forefront of transistor circuit design. Although integrated circuits have widespread application, the role of discrete transistors both as important building blocks which students must understand, and as practical solutions to design problems, remains undiminished. The ninth edition has been thoroughly updated to cover the latest technology and applications, including computer circuit simulation, and many diagrams have been... Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them ... |
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285,83 zł |
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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors
ISBN: 9780890064269 / Angielski / Twarda / 368 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed.
This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD prog...
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cena:
803,74 zł |
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Thin Film Transistors: Materials and Processes
ISBN: 9781402075049 / Angielski / Pudełko z zestawem (boxed set) / 1016 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 List of Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 CHAPTER 4 a-Si: H TFT Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 YueKuo 1. Introduction . . . . . . . . . . . . . . . . . . . . . . ....
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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cena:
1167,35 zł |
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Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age
ISBN: 9781403988157 / Angielski / Twarda / 302 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. When William Shockley invented the transistor, the world was changed forever and he was awarded the Nobel Prize. But today Shockley is often remembered only for his incendiary campaigning about race, intelligence, and genetics. His dubious research led him to donate to the Nobel Prize sperm bank and preach his inflammatory ideas widely, making shocking pronouncements on the uselessness of remedial education and the sterilization of individuals with IQs below 100. Ultimately his crusade destroyed his reputation and saw him vilified on national television, yet he died proclaiming his work on...
When William Shockley invented the transistor, the world was changed forever and he was awarded the Nobel Prize. But today Shockley is often remembere...
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cena:
272,35 zł |
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MicroCMOS Design
ISBN: 9781439818954 / Angielski / Twarda / 434 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design examples to illustrate circuit design so that readers can develop an intuitive rather than conventional analytic understanding. System-level knowledge is built upon understanding fundamental concepts of noise, jitter, and frequency and phase noise. This material addresses basic abstract concepts of transistor circuits, as well as advanced topics such as ADCs and PLLs, providing a proper perspective on this advanced SoC design. Other topics...
Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design e...
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cena:
1091,37 zł |
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Nonlinear Transistor Model Parameter Extraction Techniques
ISBN: 9780521762106 / Angielski / Twarda / 366 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
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cena:
587,27 zł |
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Applications of Silicon-Germanium Heterostructure Devices
ISBN: 9780750307239 / Angielski / Twarda / 402 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of heterojunction transistors, and their relevance in developing the technologies involving strained layers, device design and simulation of coventional silicon bipolar transistors and SiGe HBTs at room and low temperatures, device design and simulation for MOSEFETs, including SiGe and strained-Si channel MOSEFETs. It concludes with simulations and examples for different applications.
This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of het...
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cena:
1299,25 zł |
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Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age
ISBN: 9780230551923 / Angielski / Miękka / 302 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This is the first biography of William Shockley, founding father of Silicon Valley - one of the most significant and reviled scientists of the 20th century. Drawing upon unique access to the private Shockley archives, veteran technology historian and journalist Joel Shurkin gives an unflinching account of how such promise ended in such ignominy.
This is the first biography of William Shockley, founding father of Silicon Valley - one of the most significant and reviled scientists of the 20th ce...
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cena:
194,52 zł |
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Fundamentals of Ultra-Thin-Body Mosfets and Finfets
ISBN: 9781107030411 / Angielski / Twarda / 226 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. Describes FD/SOI MOSFETs and 3-D FinFETs in detail Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time Projects potential nanoscale UTB CMOS performances Contains end-of-chapter...
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise...
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cena:
272,12 zł |
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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors
ISBN: 9781891121890 / Angielski / Twarda / 350 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such...
This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic cour...
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cena:
525,17 zł |
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Fundamentals of Nanotransistors
ISBN: 9789814571722 / Angielski / Twarda / 388 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the...
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where tradi...
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cena:
368,98 zł |
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Cryogenic Operation of Silicon Power Devices
ISBN: 9781461376354 / Angielski / Miękka / 148 str. Termin realizacji zamówienia: ok. 5-8 dni roboczych. The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac- tical means of fabricating electrical components and devices with lossless con- ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans- mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper- ating systems could be found such as the 5 T saddle...
The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a ...
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cena:
389,09 zł |
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