• Wyszukiwanie zaawansowane
  • Kategorie
  • Kategorie BISAC
  • Książki na zamówienie
  • Promocje
  • Granty
  • Książka na prezent
  • Opinie
  • Pomoc
  • Załóż konto
  • Zaloguj się

 » książki  » Technology & Engineering - Electronics - Transistors

zaloguj się | załóż konto
Logo Krainaksiazek.pl

koszyk

konto

szukaj
topmenu
Księgarnia internetowa
Szukaj
Książki na zamówienie
Promocje
Granty
Książka na prezent
Moje konto
Pomoc
 
 
Wyszukiwanie zaawansowane
Pusty koszyk
Bezpłatna dostawa dla zamówień powyżej 20 złBezpłatna dostawa dla zamówień powyżej 20 zł

Kategorie główne

• Nauka
 [2949965]
• Literatura piękna
 [1857847]

  więcej...
• Turystyka
 [70818]
• Informatyka
 [151303]
• Komiksy
 [35733]
• Encyklopedie
 [23180]
• Dziecięca
 [617748]
• Hobby
 [139972]
• AudioBooki
 [1650]
• Literatura faktu
 [228361]
• Muzyka CD
 [398]
• Słowniki
 [2862]
• Inne
 [444732]
• Kalendarze
 [1620]
• Podręczniki
 [167233]
• Poradniki
 [482388]
• Religia
 [509867]
• Czasopisma
 [533]
• Sport
 [61361]
• Sztuka
 [243125]
• CD, DVD, Video
 [3451]
• Technologie
 [219309]
• Zdrowie
 [101347]
• Książkowe Klimaty
 [123]
• Zabawki
 [2362]
• Puzzle, gry
 [3791]
• Literatura w języku ukraińskim
 [253]
• Art. papiernicze i szkolne
 [7933]
Kategorie szczegółowe BISAC

Kategoria BISAC: Technology & Engineering >> Electronics - Transistors

ilość książek w kategorii: 158

Wyświetl książki:
Dostępne języki:
Cena:
od:
do:
ilość na stronie:


 
Electronics For Absolute Beginners: A Beginner's Guide To Understanding Electronics

ISBN: 9798850078553 / Angielski

ISBN: 9798850078553/Angielski

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Jace Pollux
cena: 44,47 zł

 Advanced Field Effect Transistor  9781032493800 Taylor & Francis Ltd
Advanced Field Effect Transistor

ISBN: 9781032493800 / Twarda / 344 str.

ISBN: 9781032493800/Twarda/344 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
cena: 659,85 zł

 Device Circuit Co-Design Issues in Fets Shubham Tayal Billel Smaani Shiromani Balmukund Rahi 9781032416823 CRC Press
Device Circuit Co-Design Issues in Fets

ISBN: 9781032416823 / Angielski

ISBN: 9781032416823/Angielski

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Shubham Tayal; Billel Smaani; Shiromani Balmukund Rahi
cena: 224,78 zł

 
Thin-Film Transistor Reliability

ISBN: 9789815322637 / Angielski

ISBN: 9789815322637/Angielski

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Mingxiang Wang; Meng Zhang
cena: 356,07 zł

 
Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications

ISBN: 9781032446844 / Angielski

ISBN: 9781032446844/Angielski

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Young Suh Song; Shubham Tayal; Shiromani Balmukund Rahi
cena: 244,34 zł

 Advanced Field-Effect Transistors: Theory and Applications Dharmendra Singh Yadav Shiromani Balmukund Rahi Sukeshni Tirkey 9781032493879 CRC Press
Advanced Field-Effect Transistors: Theory and Applications

ISBN: 9781032493879 / Angielski / 26-12-2025

ISBN: 9781032493879/Angielski/26-12-2025

Książka dostępna od: 26-12-2025
Dharmendra Singh Yadav; Shiromani Balmukund Rahi; Sukeshni Tirkey
Termin ukazania się książki: 26-12-2025
Książkę można już zamówić z rabatem 5%
244,34 zł
232,12 zł

 Mosfet Theory and Design Warner, R. M. 9780195116427 Oxford University Press
Mosfet Theory and Design

ISBN: 9780195116427 / Angielski / Miękka / 272 str.

ISBN: 9780195116427/Angielski/Miękka/272 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Jr. R. M. Warner; B. L. Grung; B. L. Grung
Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the...
Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment o...
cena: 811,97 zł

 Crystal Fire: The Invention of the Transistor and the Birth of the Information Age (Revised) Riordan, Michael 9780393318517 W. W. Norton & Company
Crystal Fire: The Invention of the Transistor and the Birth of the Information Age (Revised)

ISBN: 9780393318517 / Angielski / Miękka / 366 str.

ISBN: 9780393318517/Angielski/Miękka/366 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Michael Riordan; Lillian Hoddeson
On December 16, 1947, John Bardeen and Walter Brattain, physicists at Bell Laboratories, jabbed two electrodes into a sliver of germanium. The power flowing from the germanium far exceeded what went in; in that moment the transistor was invented and the Information Age was born. No other devices have been as crucial to modern life as the transistor and the microchip it spawned, but the story of the science and personalities that made these inventions possible has not been fully told until now. Crystal Fire fills this gap and carries the story forward. William Shockley, Bell Labs' team leader...
On December 16, 1947, John Bardeen and Walter Brattain, physicists at Bell Laboratories, jabbed two electrodes into a sliver of germanium. The power f...
cena: 96,15 zł

 Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction Juin Jei Liou 9780412146015 Kluwer Academic Publishers
Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction

ISBN: 9780412146015 / Angielski / Twarda / 349 str.

ISBN: 9780412146015/Angielski/Twarda/349 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Juin J. Liou; Adelmo Ortiz-Conde; F. Garcia-Sanchez
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all...
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectru...
cena: 605,23 zł

 Sige Heterojunction Bipolar Transistors Ashburn, Peter 9780470848388 John Wiley & Sons
Sige Heterojunction Bipolar Transistors

ISBN: 9780470848388 / Angielski / Twarda / 272 str.

ISBN: 9780470848388/Angielski/Twarda/272 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Peter Ashburn
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.

The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications.

This book features:

  • SiGe products include chip sets for wireless...
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio fre...
cena: 637,73 zł

 Insulated Gate Bipolar Transistor Igbt Theory and Design Khanna, Vinod Kumar 9780471238454 IEEE Computer Society Press
Insulated Gate Bipolar Transistor Igbt Theory and Design

ISBN: 9780471238454 / Angielski / Twarda / 648 str.

ISBN: 9780471238454/Angielski/Twarda/648 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Vinod Khamar Khanna; V. K. Khanna
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals...
cena: 884,69 zł

 Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts Liu, William 9780471297000 Wiley-Interscience
Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts

ISBN: 9780471297000 / Angielski / Twarda / 520 str.

ISBN: 9780471297000/Angielski/Twarda/520 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
William Liu
A systematic, accessible introduction to III–V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III–V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III–V devices—heterojunction bipolar transistors...
A systematic, accessible introduction to III–V semiconductor devices With this handy book, readers seeking to understand semiconductor devices ba...
cena: 967,01 zł

 Principles of Transistor Circuits Mike James Stan Amos S. W. Amos 9780750644273 Newnes
Principles of Transistor Circuits

ISBN: 9780750644273 / Angielski / Miękka / 416 str.

ISBN: 9780750644273/Angielski/Miękka/416 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Mike James; Stan Amos; S. W. Amos

Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them at the forefront of transistor circuit design.

Although integrated circuits have widespread application, the role of discrete transistors both as important building blocks which students must understand, and as practical solutions to design problems, remains undiminished.

The ninth edition has been thoroughly updated to cover the latest technology and applications, including computer circuit simulation, and many diagrams have been...

Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them ...

cena: 268,83 zł

 Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors J.Michael Golio 9780890064269 Artech House Publishers
Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

ISBN: 9780890064269 / Angielski / Twarda / 368 str.

ISBN: 9780890064269/Angielski/Twarda/368 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
J.Michael Golio
This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed.
This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD prog...
cena: 710,78 zł

 Thin Film Transistors: Materials and Processes Kuo, Yue 9781402075049 Kluwer Academic Publishers
Thin Film Transistors: Materials and Processes

ISBN: 9781402075049 / Angielski / Pudełko z zestawem (boxed set) / 1016 str.

ISBN: 9781402075049/Angielski/Pudełko z zestawem (boxed set)/1016 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Yue Kuo
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 List of Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 CHAPTER 4 a-Si: H TFT Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 YueKuo 1. Introduction . . . . . . . . . . . . . . . . . . . . . . ....
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
cena: 1210,50 zł

 Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age Shurkin, J. 9781403988157 MacMillan
Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age

ISBN: 9781403988157 / Angielski / Twarda / 302 str.

ISBN: 9781403988157/Angielski/Twarda/302 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Joel Shurkin
When William Shockley invented the transistor, the world was changed forever and he was awarded the Nobel Prize. But today Shockley is often remembered only for his incendiary campaigning about race, intelligence, and genetics. His dubious research led him to donate to the Nobel Prize sperm bank and preach his inflammatory ideas widely, making shocking pronouncements on the uselessness of remedial education and the sterilization of individuals with IQs below 100. Ultimately his crusade destroyed his reputation and saw him vilified on national television, yet he died proclaiming his work on...
When William Shockley invented the transistor, the world was changed forever and he was awarded the Nobel Prize. But today Shockley is often remembere...
cena: 302,60 zł

 MicroCMOS Design Bang-Sup Song 9781439818954 CRC Press
MicroCMOS Design

ISBN: 9781439818954 / Angielski / Twarda / 434 str.

ISBN: 9781439818954/Angielski/Twarda/434 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Bang-Sup Song
Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design examples to illustrate circuit design so that readers can develop an intuitive rather than conventional analytic understanding. System-level knowledge is built upon understanding fundamental concepts of noise, jitter, and frequency and phase noise. This material addresses basic abstract concepts of transistor circuits, as well as advanced topics such as ADCs and PLLs, providing a proper perspective on this advanced SoC design. Other topics...
Starting at the transistor level, this book covers basic system-level CMOS design concepts applicable to modern SoCs. The text uses practical design e...
cena: 1075,31 zł

 Nonlinear Transistor Model Parameter Extraction Techniques Matthias Rudolph Christian Fager David E. Root 9780521762106 Cambridge University Press
Nonlinear Transistor Model Parameter Extraction Techniques

ISBN: 9780521762106 / Angielski / Twarda / 366 str.

ISBN: 9780521762106/Angielski/Twarda/366 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Matthias Rudolph; Christian Fager; David E. Root
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
cena: 575,85 zł

 Applications of Silicon-Germanium Heterostructure Devices  9780750307239 Institute of Physics Publishing
Applications of Silicon-Germanium Heterostructure Devices

ISBN: 9780750307239 / Angielski / Twarda / 402 str.

ISBN: 9780750307239/Angielski/Twarda/402 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of heterojunction transistors, and their relevance in developing the technologies involving strained layers, device design and simulation of coventional silicon bipolar transistors and SiGe HBTs at room and low temperatures, device design and simulation for MOSEFETs, including SiGe and strained-Si channel MOSEFETs. It concludes with simulations and examples for different applications.
This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers the theory, device design and simulation of het...
cena: 1270,82 zł

 Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age Shurkin, J. 9780230551923 0
Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age

ISBN: 9780230551923 / Angielski / Miękka / 302 str.

ISBN: 9780230551923/Angielski/Miękka/302 str.

Termin realizacji zamówienia: ok. 5-8 dni roboczych.
Chris Turney
This is the first biography of William Shockley, founding father of Silicon Valley - one of the most significant and reviled scientists of the 20th century. Drawing upon unique access to the private Shockley archives, veteran technology historian and journalist Joel Shurkin gives an unflinching account of how such promise ended in such ignominy.
This is the first biography of William Shockley, founding father of Silicon Valley - one of the most significant and reviled scientists of the 20th ce...
cena: 201,72 zł

Pierwsza Podprzednia  4  5  6  Następna Ostatnia

Facebook - konto krainaksiazek.pl



Opinie o Krainaksiazek.pl na Opineo.pl

Partner Mybenefit

Krainaksiazek.pl w programie rzetelna firma Krainaksiaze.pl - płatności przez paypal

Czytaj nas na:

Facebook - krainaksiazek.pl
  • książki na zamówienie
  • granty
  • książka na prezent
  • kontakt
  • pomoc
  • opinie
  • regulamin
  • polityka prywatności

Zobacz:

  • Księgarnia czeska

  • Wydawnictwo Książkowe Klimaty

1997-2025 DolnySlask.com Agencja Internetowa

© 1997-2022 krainaksiazek.pl
     
KONTAKT | REGULAMIN | POLITYKA PRYWATNOŚCI | USTAWIENIA PRYWATNOŚCI
Zobacz: Księgarnia Czeska | Wydawnictwo Książkowe Klimaty | Mapa strony | Lista autorów
KrainaKsiazek.PL - Księgarnia Internetowa
Polityka prywatnosci - link
Krainaksiazek.pl - płatnośc Przelewy24
Przechowalnia Przechowalnia