This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

This book constitutes the refereed proceedings of the 21st International Symposium on VLSI Design and Test, VDAT 2017, held in Roorkee, India, in June/July 2017. The 48 full papers presented together with 27 short papers were carefully reviewed and selected from 246 submissions.