ISBN-13: 9781498783590 / Angielski / Twarda / 2017 / 138 str.
ISBN-13: 9781498783590 / Angielski / Twarda / 2017 / 138 str.
This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.