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The VLSI memory era truly began when the first production of semiconduc- tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd., and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb...

The VLSI memory era truly began when the first production of semiconduc- tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd., and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb...

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher...

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher...

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to:

-Meet the needs of a rapidly growing mobile cell phone market
-Offset a significant increase in the power dissipation of high-end microprocessor units.

Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage...

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to:

-Meet the needs of a rapidly growing mobile cell phone market
-Offset a significant increase in the power dissipation of high-end microprocessor units.

Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage...