Ultra-Low Voltage Nano-Scale Memories

ISBN-13: 9780387333984 / Angielski / Twarda / 2007 / 346 str.

Kiyoo Itoh; Masashi Horiguchi; Hitoshi Tanaka

Opis

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to: -Meet the needs of a rapidly growing mobile cell phone market
-Offset a significant increase in the power dissipation of high-end microprocessor units. Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage memory cells in the presence of large noise sources in a high-density memory-cell array. Moreover, innovative circuits and devices are needed to resolve the increasing problems of leakage currents and variability in both speed and leakage. Since the solutions to these problems lie between different fields, (e.g., digital and analog, SRAM and DRAM) a multidisciplinary approach is needed. Ultra-Low Voltage Nano-Scale Memories is an authoritative monograph that addresses these challenges. This book is written for memory and circuit designers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

Spis treści

An Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.

Blurb

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.