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wyszukanych pozycji: 6
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Integration of Functional Oxides with Semiconductors
ISBN: 9781493941698 / Angielski / Miękka / 2016 / 278 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and...
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how...
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cena:
388,20 zł |
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Integration of Functional Oxides with Semiconductors
ISBN: 9781461493198 / Angielski / Twarda / 2014 / 278 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This bookdescribes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic...
This bookdescribes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how ...
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cena:
388,20 zł |
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Materials Fundamentals of Gate Dielectrics
ISBN: 9789048167869 / Angielski / Miękka / 2011 / 476 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are... This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous s... |
cena:
582,32 zł |
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Materials Fundamentals of Gate Dielectrics
ISBN: 9781402030772 / Angielski / Twarda / 2005 / 476 str. Termin realizacji zamówienia: ok. 20 dni roboczych. According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics,...
According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between t...
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cena:
582,32 zł |
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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
ISBN: 9781605111285 / Angielski / Twarda / 2009 / 194 str. Termin realizacji zamówienia: ok. 16-18 dni roboczych. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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cena:
470,88 zł |
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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
ISBN: 9781107408326 / Angielski / Miękka / 2014 / 194 str. Termin realizacji zamówienia: ok. 16-18 dni roboczych. To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack....
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate....
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cena:
129,81 zł |
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