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Kategorie szczegółowe BISAC

Graphene for Post-Moore Silicon Optoelectronics

ISBN-13: 9783527351817 / Angielski / Twarda / 2023 / 300 str.

Y Xu
Graphene for Post-Moore Silicon Optoelectronics Y Xu 9783527351817 Wiley-VCH Verlag GmbH - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Graphene for Post-Moore Silicon Optoelectronics

ISBN-13: 9783527351817 / Angielski / Twarda / 2023 / 300 str.

Y Xu
cena 647,39
(netto: 616,56 VAT:  5%)

Najniższa cena z 30 dni: 583,28
Termin realizacji zamówienia:
ok. 16-18 dni roboczych.

Darmowa dostawa!
Kategorie:
Nauka, Chemia
Kategorie BISAC:
Technology & Engineering > Materials Science - Electronic Materials
Science > Chemia - Fizyczna
Technology & Engineering > Electronics - Circuits - General
Wydawca:
Wiley-VCH Verlag GmbH
Język:
Angielski
ISBN-13:
9783527351817
Rok wydania:
2023
Ilość stron:
300
Wymiary:
24.4 x 17.0
Oprawa:
Twarda

1 INTRODUCTION OF GRAPHENE FOR SILICON OPTOELECTRONICS1.1 Introduction1.2 Optical Absorption1.3 Emergence of Graphene in Silicon Optoelectronics1.4 Photodetection in Graphene1.5 Outlook2 GROWTH AND TRANSFER OF GRAPHENE FOR SILICON OPTOELECTRONICS2.1 Introduction2.2 Growth of Graphene2.3 Dielectric deposition on Graphene2.4 Graphene Transfer Methods2.5 Fabrication of Solution Processed Graphene and Integration with Silicon2.6 Graphene Transfer on Flexible Silicon2.7 Graphene integration with Silicon CMOS Process2.8 Challenges and Future Perspectives3 PHYSICS OF GRAPHENE/SILICON JUNCTIONS3.1 Introduction3.2 Physics of Schottky Junction3.3 Measurement of Schottky Barrier Height3.4 2D Materials and Schottky Junctions3.5 Challenges and Future Perspectives4 GRAPHENE/SILICON JUNCTION FOR HIGH PERFORMANCE PHOTODETECTORS4.1 Introduction4.2 Ultraviolet Photodetectors4.3 Visible to Near Infrared Photodetectors4.4 Broadband Photodetectors4.5 Hybrid Graphene/Silicon Photodetectors4.6 Challenges and Perspectives5 GRAPHENE/SILICON SOLAR ENERGY HARVESTING DEVICES5.1 Introduction5.2 Photovoltaic Mechanism and Performance Parameters in Graphene/Silicon Solar Cells5.3 Theoretical Efficiency Limits of Graphene/Silicon Solar Cells5.4 Optimization of Graphene/Silicon Solar Cells5.5 Challenges and Perspectives6 GRAPHENE SILICON INTEGRATED WAVEGUIDE DEVICES6.1 Introduction6.2 Hybrid Waveguide Photodetector6.3 Hybrid Waveguide Modulator6.4 Challenges and Perspectives7 GRAPHENE FOR SILICON IMAGE SENSOR7.1 Introduction7.2 Quantum Dot based Infrared Graphene Image Sensor7.3 Graphene Thermopile Image Sensor7.4 Graphene THz Image Sensor7.5 Curved Image Sensor Array7.6 Neural Network Image Sensors7.7 Graphene Charge Coupled Device Image Sensor7.8 Graphene Based Position Sensitive Detector7.9 Challenges and Perspectives8 SYSTEM INTEGRATION WITH GRAPHENE FOR SILICON OPTOELECTRONICS8.1 Introduction8.2 Graphene Silicon Flip Chips8.3 Graphene Silicon Heterogeneous Integration8.4 Graphene Silicon Monolithic Integration for Optoelectronics Applications8.5 Challenges and Prospective9 GRAPHENE FOR SILICON OPTOELECTRONIC SYNAPTIC DEVICES9.1 Introduction9.2 Silicon Neurons9.3 Synaptic devices9.4 Silicon Optoelectronic Synaptic Devices9.5 ORAM Synaptic Devices9.6 Graphene for Silicon Synaptic Devices9.7 Synaptic Phototransistor9.8 Mechano-photonic Synaptic Transistor9.9 Challenges and Prospects10 CHALLENGES AND PROSPECTS OF GRAPHENE/SILICON OPTOELECTRONICS10.1 Emergence of Wafer Scale Systems10.2 Wafer Scale Synthesis and Foundry Process10.3 Scalable Transfer and Quality Metrics10.4 Scaling Laws and Hot Electron Effects10.5 Optical Modulators10.6 Infrared Photodetectors10.7 Neuromorphic Optoelectronics

Prof. Yang Xu is a Fellow of the Institute of Physics (FInstP, IOP Fellow), IEEE NTC Distinguished Lecturer and IEEE Senior Member of the Electron Devices Society. He received his B.S. degree in Institute of Microelectronics at Department of EE from Tsinghua University, M.S. and Ph.D. degrees in ECE from the University of Illinois Urbana-Champaign (UIUC), USA. He is now a full professor at the School of Micro-Nano Electronics, Zhejiang University, China. He was also a visiting by-Fellow of Churchill College at the University of Cambridge, UK, and a visiting professor at the University of California Los Angles (UCLA). He has published more than 120 papers including Nature Nanotechnology, Nature Electronics, Nature Photonics, Chemical Reviews, Advanced Materials, Chemical Society Reviews, Nature Communications, Nano Letters, ACS Nano, IEEE-EDL, IEEE-TED, IEEE-TNANO, and IEDM, etc. He holds over 30 granted patents and gave more than 50 conference talks. He is also served as Associate Editor of IEEE Nanotechnology Magazine, Microelectronics Journal, Micro & Nano Letters, and IET Circuits, Devices & Systems, Advisory Panel Member of IOP Nanotechnology, and was TPC committee members of IEEE-EDTM, IEEE-IPFA, and IEEE-EDAPS conferences. His research interests include emerging 2D/3D integrated optoelectronic devices for Internet-of-Things and Post-Moore Ubiquitous Electronics.Khurram Shehzad obtained his Ph.D. in Materials Science and Engineering in 2011 from Beijing University of Chemical Technology. From 2011 to 2013, he was a postdoctoral fellow at the center for nano and micromechanics, Tsinghua University. He joined Zhejiang University as a postdoctoral fellow in 2014. He served as a Research Associate Professor at the School of Micro-Nano Electronics, Zhejiang University, China, and as an associated faculty at Zhejiang University?Hangzhou Global Scientific and Technological Innovation Center. His current research interests include 2D materials/Si hybrids for applications in energy, healthcare, and electronics.Srikrishna Chanakya Bodepudi is a Distinguished Research Fellow at the School of Micro-Nano Electronics, Zhejiang University, China (2018?now). He received a Ph.D. degree from University of Alberta, Canada (2016). In 2017?2018, he worked as a research associate and a course instructor in the Department of Electrical Engineering, University of Alberta. He is the recipient of the NSFC Young Scientists Fund. His current research interests include bulk 2D materials for optoelectronic and memory circuits for applications in energy, healthcare, and data storage.Dr. Ali Imran obtained M.S. from Center of Excellence in Solid State Physics, University of the Punjab Lahore and Ph.D. from School of Optics and Photonics, Beijing Institute of Technology. He is the recipient of Distinguished International Student award from Beijing Institute of technology. He worked as the postdoctoral fellow at State Key Lab of Micro and Mesoscopic Physics, School of Physics, Peking University. Currently, he is perusing his research at School of Micro and Nano Electronics, Zhejiang University. Bin Yu received his Ph.D. degree in Electrical Engineering from the University of California at Berkeley. His current research interests include nanoelectronics, sensors, and neuromorphic devices. Specific interests include post-Si devices, carbon-based electronics, neuromorphic vision, image sensors, and other emerging devices. He has authored or co-authored 8 book/book chapters and over 280 research papers and was the speaker of more than 150 invited talks to international conferences, universities, professional societies, and industries around the globe. Dr. Yu served on the invited panels and advisory/organizing/technical program committees of many international conferences. He was/is Editor of IEEE Electron Devices Letters, Associated Editor of IEEE Transactions on Nanotechnology, Editor of Nano-Micro Letters, and Guest Editor of IEEE Transactions on E



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