Band Structure Engineering in Semiconductor Microstructures

ISBN-13: 9781475707724 / Angielski / Miękka / 2012 / 400 str.

Richard Abram; M. Jaros; R. a. Abram

Opis

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc- tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

Spis treści

Electronic Structure, Band Offsets and Stability.- Comments on “Can band offsets be modified controllably?”.- The pressure dependent band offset in a type II superlattice, a test for band line-up theories.- Electronic properties of semiconductor interfaces: the control of interface barriers.- Polar/polar, covalent/covalent and covalent/polar semiconductor superlattices.- Band offsets at semiconductor heterojunctions: bulk or interface properties?.- The physics of Hg-based heterostructures.- Valence band discontinuities in HgTe-CdTe-ZnTe heterojunction systems.- Exact envelope function equations for microstructures and the particle in a box model.- A method for calculating electronic structure of semiconductor superlattices: perturbation.- The effects of ordering in ternary semiconductor alloys: electronic and structural properties.- Ab-initio molecular dynamics studies of microclusters.- Transport Properties.- Quantum interference in semiconductor devices.- A review of developments in resonant tunnelling.- Observation of ballistic holes.- Quantum transport theory of resonant tunnelling devices.- Hot electron effects in microstructures.- Models for scattering and vertical transport in microstructures and superlattices.- Electron beam source molecular beam epitaxy of AlxGa1?x As graded band gap device structures.- Future trends in quantum semiconductor devices.- Optical Properties.- Novel optical properties of InGaAs-InP quantum wells.- Time resolved spectroscopy of GaAs/AlGaAs quantum well structures.- Recombination mechanisms in a type II GaAs/AlGaAs superlattice.- Interface recombination in GaAs-GaA1As quantum wells.- The interface as a design tool for modelling of optical and electronic properties of quantum well devices.- Characterization and design of semiconductor lasers using strain.- Photoreflectance and photoluminescence of strained InxGa1?x As/GaAs single quantum wells.- Excitons in quantum well structures.- Fourier determination of the hole wavefunctions in p-type modulation doped quantum wells by resonant Raman scattering.- Optical properties of superlattices.- Ab-initio calculated optical properties of [001] (GaAs)n — (A1As)n superlattices.- Effect of a parallel magnetic field on the hole levels in semiconductor superlattices.- Profit from heterostructure engineering.- Participants.