Zinc Oxide: From Fundamental Properties Towards Novel Applications

ISBN-13: 9783642264047 / Angielski / Miękka / 2012 / 300 str.

Claus F. Klingshirn; Andreas Waag; Axel Hoffmann

Opis

After the invention of semiconductor-based recti?ers and diodes in the ?rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the ?rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The ?rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g., PbS and Se in rf-detectors and recti?ers used frequentlyin the ?rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi?cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III-V c- poundsprovedto be muchmoredif?cult, thoughbeautifuldeviceconceptshadbeen developed. Therefore, GaAsanditsalloysandnanostructureswithotherIII-Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future.

Spis treści

Crystal Structure, Chemical Binding, and Lattice Properties.- Growth.- Band Structure.- Electrical Conductivity and Doping.- Intrinsic Linear Optical Properties Close to the Fundamental Absorption Edge.- Bound Exciton Complexes.- Influence of External Fields.- Deep Centres in ZnO.- Magnetic Properties.- Nonlinear Optics, High Density Effects and Stimulated Emission.- Dynamic Processes.- Past, Present and Future Applications.- Conclusion and Outlook.

O autorze

Axel Hoffmann, geboren und wohnhaft in Frankfurt am Main, sammelte nach dem Abitur universitäre Erfahrungen in den Bereichen Literaturwissenschaft und Politik. Er arbeitete unter anderem als DJ, Fernsehmoderator, Kulissenbauer und Taxifahrer. Heute führt der bekennende Fan von Eintracht Frankfurt im Museum des Vereins durch die traditionsreiche Geschichte, moderiert Veranstaltungen und betreibt einen Blog.

Blurb

This book gives a comprehensive review of the present state of the art in ZnO R+D, including growth, doping, lattice dynamics, electric magnetic and optical properties. The emphasis is on the electric and optical properties, because this is the area where novel applications may be expected with highest promise. The book highlights not only the most recent results but gives both an overview of past research and of the present status -- not avoiding critical and controversial discussions of various aspects such as bank symmetries and laser processes. Intended to have long-lasting impact on ZnO R+D, this monograph addresses (post-)graduate students but also advanced scientists, who want to embark on ZnO research or are already involved, the present state of the art and assists them in avoiding duplication of old results (or mistakes).