Introduction to Gallium Nitride Properties and ApplicationsGaN-Based Materials: Substrates, Growth Methods and Quantum Well PropertiesState of the Art of GaN-Based HEMTs for Mm-Wave ApplicationsTechnologies for Normally-Off GaN HEMTsStatus and Perspectives of Vertical GaN Power DevicesGallium Nitride Light Emitting DiodesNitride-Based Laser DiodesBlue and Green Vertical-Cavity Surface-Emitting LasersReliability Issues in GaN HEMTs and LEDsIntegration of GaN with 2D Materials for Novel High Frequency Devices
Fabrizio Roccaforte is Senior Researcher at Italian National Research Council's (CNR) Institute of Microelectronics and Microsystems (IMM) in Catania, Italy. He received his PhD from University of Göttingen, Germany in 1999 and worked as Scientific Consultant at STMicroelectronics N.V. in Italy before joining IMM. His research interests are in the field of wide band gap semiconductor materials and materials for power electronics devices. Dr. Roccaforte has authored more than 250 research articles, several review articles, five book chapters, and three patents.Michal Leszczynski is a Professor of Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress), Warsaw, Poland. He received his PhD (1990) and Habilitation (1996) in Physics from Institute of Physics - Polish Academy of Science, Warsaw. He then did postdoctoral research at Institute of Theoretical Physics, Trieste, Italy and at Institute of Advanced Materials, Brindisi, Italy. He has served as Visiting Professor at Center of Atomic Energy, Grenoble, France and as Advisor at Philips Analytical, Netherlands. Prof. Leszczynski is a co-founder and now vice-president (R&D) of TopGaN Lasers, a spinoff of Unipress. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction. He has authored more than 350 research articles.