Einstein Relation in Compound Semiconductors and Their Nanostructures

ISBN-13: 9783642098499 / Angielski / Miękka / 2010 / 458 str.

Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; Debashis De

Opis

In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi s, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e?ect devices. In ultrathin ?lms, due to the reduction of symmetry in the wave vector space, the motion of the carriers in the direction normal to the ?lm becomes quantized leading to the quantum size e?ect. Such systems ?nd extensive applications in quantum well lasers, ?eld e?ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti?c journals, proceedings of international conferences and various - view articles."

Spis treści

Basics of the Einstein Relation.- The Einstein Relation in Bulk Specimens of Compound Semiconductors.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration.- The Einstein Relation in Compound Semiconductors Under Size Quantization.- The Einstein Relation in Quantum Wires of Compound Semiconductors.- The Einstein Relation in Inversion Layers of Compound Semiconductors.- The Einstein Relation in Nipi Structures of Compound Semiconductors.- The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- Conclusion and Future Research.

O autorze

Professor K. P. Ghatak is the First Recipient of the Degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955 and in the same year he received the prestigious Indian National Science Academy award. He joined as Lecturer in the Institute of Radio Physics and Electronics of the University of Calcutta in 1983, Reader in the Department of Electronics and Telecommunication of Jadavpur University in 1987 and Professor in the Department of Electronic Science of the University of Calcutta in 1994 respectively. His present research interest is nanostructured science and technology. He is the principal co-author of more than 200 research papers on Semiconductor and Nanoscience in eminent peer-reviewed International Journals and more than 50 research papers in the Proceedings of the International Conferences held in USA and many of his papers are being cited many times. Professor Ghatak is the invited Speaker of SPIE, MRS, etc. and is the referee of different eminent Journals.

Blurb

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.