In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi s, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting...

In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi s, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting...

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. It covers a wide range of different technologically important electronic compounds, and contains 200 open research problems.

This book examines the effective electron mass in nanodevices, explaining changes in band structure of optoelectronic semiconductors, and offering insight into electronic behavior in doped semiconductors and nanostructures. Includes 200 problems and questions.

Investigates the thermoelectric power in nanostrcutured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, and zerogap. This monograph contains 150 open research problems which form the core and are useful for PhD students and researchers.

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that...

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated...

The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The...