Kategoria BISAC: Technology & Engineering >> Materials Science - Electronic Materials

The 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015) was held from 19-23 October 2015. This congress focused on the latest developments of sustainable energy technologies, materials for sustainable energy applications and environmental and economic perspectives of energy. These proceedings included 40 peer-reviewed technical papers, submitted by leading academic and research institutions from over 23 countries and represented some of the most cutting-edge researches available. The sections included in the 40 papers are listed as follows:

This book systematically reviews recent advances in the synthetic methods and applications of helicenes. The first part of this book introduces the nomenclature and structural features of helicenes. The second part reviews several classic and useful methods as well as recently-developed approaches for the preparation and functionalization of helicenes, including photocyclization and Diels-Alder reactions, which are two important breakthroughs in the syntheses of helicenes. In the last part, the applications of helicenes in asymmetric syntheses, molecular machines, molecular recognition,...

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power...

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter...

The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc. are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic...