Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is stillseverely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesisreports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access...
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, ...
This thesis offers a key contribution to improving optoelectronic devices and performance of photovoltaic materials. It reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations.
This thesis offers a key contribution to improving optoelectronic devices and performance of photovoltaic materials. It reports almost lattice-matched...
