Alexander A. Demkov (University of Texas, Austin), Bill Taylor, H. Rusty Harris (Texas A & M University), Jeffery W. But
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack....
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate....
