In "The gm/ID Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits," we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model...
In "The gm/ID Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits," we compare the semi-empirical to the compact ...
