Small-signal modeling and microwave noise
characterization of
InGaP/GaAs HBTs will be explored. Device physics,
analytical
extraction and numerical optimization are
incorporated to extract
small-signal equivalent circuit parameters (ECPs),
improved by
modeling interaction between contact metalizations
and hybrid
optimization of T and Pi circuit topologies.
Excellent agreement
between measured and modeled S-parameters, with limited
deviation of optimized ECPs from their initial
values, is obtained up
to 40 GHz for a wide range of bias. Combined with NF50
measurement, frequency- and...