InGaP/GaAs Heterostructure Bipolar Thansistors

ISBN-13: 9783639100549 / Angielski / Miękka / 2009 / 108 str.

Xiu Xing

Opis

Small-signal modeling and microwave noisecharacterization of InGaP/GaAs HBTs will be explored. Device physics,analytical extraction and numerical optimization areincorporated to extract small-signal equivalent circuit parameters (ECPs),improved by modeling interaction between contact metalizationsand hybrid optimization of T and Pi circuit topologies.Excellent agreement between measured and modeled S-parameters, with limited deviation of optimized ECPs from their initialvalues, is obtained up to 40 GHz for a wide range of bias. Combined with NF50 measurement, frequency- and bias-dependent noiseparameters (NPs) up to 20 GHz are extracted using polynomialapproximation of noise parameters for intrinsic device. Facilitated bythe correction ofsource mismatch in measurement, great agreement between measured and modeled NF50, as well as acceptablydeviated optimized fitting factors, results in a minimum NFminof 1.64 dB at 10 GHz for an InGaP/GaAs HBT with two 2.3 by 5.6 um2emitters. Study of geometry-dependent performance shows promiseof high-speed and low noise InGaP/GaAs HBTs using narrow,long, and at least two-sided base contacts.

O autorze

Xiu Xing received the Bachelor s degree in 2005 from Peking
University, China. Then
she joined University of Notre Dame, focusing on the fabrication,
small-signal
modeling and microwave noise characterization of HBTs. Now she is
working towards
her Ph.D. degree, investigating InGaAs-channel MOSFETs with InAlP
native oxide gate
dielectric.