To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack....
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate....
Smart/intelligent systems employ active materials as sensors/actuators to respond to environmental conditions for next-generation machines and structures - applications ranging from everyday life to space exploration missions, from civilian products to military needs, from robots to information/communication technology. It is not surprising, then, that the development of smart materials systems and structures demand higher performance sensors/actuators with new and reliable functions and a fully integrated composite system design. This requires the combination of active and passive materials...
Smart/intelligent systems employ active materials as sensors/actuators to respond to environmental conditions for next-generation machines and structu...
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss...
