This work describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It also describes the use of carbon-doping and low damage dry etching tehniques that have proven indispensable in making reliable, high performance devices. These devices have many applications, such as in cordless telephones and high speed lightwave communication systems.
This work describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as hetero...
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also...
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation a...
