This work describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It also describes the use of carbon-doping and low damage dry etching tehniques that have proven indispensable in making reliable, high performance devices. These devices have many applications, such as in cordless telephones and high speed lightwave communication systems.
This work describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as hetero...
This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers ( 400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in...
This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wave...
