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Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.

The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such...

The first two subvolumes III/34Cl and C2 on the Optical Properties of Semiconductor Quantum Structures have been well received by the scientific community. They concentrated on theoretical concepts (chapter 1), experimental methods (chapter 2), III-V semiconductors (chapter 4), I-VII semiconductors (chapter 6), and IV-VI semiconductors (chapter 7) in subvolume Cl. The II-VII materials (chapter 5) have been treated in subvolume C2. The present subvolume III/34C3 finishes the review on optical properties, by adding the chapter 3 on group IV materials. There are exhaustive data on bulk materials...