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wyszukanych pozycji: 7
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Novel Schottky contacts to n-type gallium nitride
ISBN: 9783844324839 / Angielski / Miękka / 2011 / 148 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. Group III-V wide band gap semiconductor particularly GaN received a great deal of attention in the past decade due to its potential for the realization of electronic and optoelectronic devices. Its wide band gap, high break down field, and high electron saturation velocity also make it an attractive candidate for the development of electronic devices operating at high temperature, high power and high frequency devices such as light emitting diodes, laser diodes, metal-semiconductor field effect transistors and high electron mobility transistors. Especially, the performance and reliability of...
Group III-V wide band gap semiconductor particularly GaN received a great deal of attention in the past decade due to its potential for the realizatio...
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cena:
265,77 zł |
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
ISBN: 9786139814923 / Angielski / Miękka / 2018 / 148 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
cena:
251,80 zł |
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Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures
ISBN: 9783659927140 / Angielski / Miękka / 2016 / 148 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
cena:
251,80 zł |
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Electrical Properties of n-GaN based MOS type Schottky Junctions
ISBN: 9786203202168 / Angielski / Miękka / 2021 / 152 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
cena:
278,83 zł |
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Rare-earth Metal Schottky Contacts on p-type InP : Electronic device applications
ISBN: 9783659868771 / Angielski / Miękka / 2016 / 136 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
cena:
278,83 zł |
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Studies on Electrical Properties of GaN based MIS Type Schottky Device
ISBN: 9786138967729 / Angielski / Miękka / 108 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due to its outstanding properties such as a high breakdown field in wide-band gap semiconductor materials and a high saturation electron velocity. A number of GaN-based devices such as light-emitting diodes [LEDs], laser diodes [LDs], Solar-blind MSM-photodetectors, metal-semiconductor field effect transistor [MESFETs], heterostructure field-effect transistors [HFETs] and high electron mobility transistors [HEMTs] have been reported. However, larger...
Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due ...
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cena:
296,85 zł |
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Studies on Schottky Electrodes to n-type Indium Phosphide : Electronic Device Applications
ISBN: 9786200082381 / Angielski Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
cena:
197,75 zł |
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