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The production of phosphorous after neutron irradiation on intrinsic samples was studied.All the samples were annealed at 800 oC for one hour after neutron irradiation. The purpose is that to remove defects from the irradiated samples. After Annealing etching were carried out in mixture of hydrofloric acid (HF ) and deionized water ( DI water) for removing oxide layer from the surface of samples.The samples were characterized by DC- electrical resistivity ,% reflection and secondary ion mass spectroscopy ( SIMS). DC -electrical resistivity was carried out before and after annealing . DC...