wyszukanych pozycji: 8
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Remedies of Short Channel Effects in Conventional MOSFET
ISBN: 9783659566264 / Angielski / Miękka / 2014 / 76 str. Termin realizacji zamówienia: ok. 13-18 dni roboczych. MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE).The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the...
MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobi...
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cena:
185,57 zł |
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Surface potential of Dual Material Gate MOSFET with high-k dielectrics
ISBN: 9783659421228 / Angielski / Miękka / 2013 / 64 str. Termin realizacji zamówienia: ok. 13-18 dni roboczych. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing...
The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tun...
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cena:
185,57 zł |
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Revisao dos MOSFETs nao convencionais
ISBN: 9786206030478 / Portugalski Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
cena:
311,12 zł |
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UEberblick uber nicht konventionelle MOSFETs
ISBN: 9786206030379 / Niemiecki Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
cena:
311,12 zł |
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Examen des MOSFET non conventionnels
ISBN: 9786206030393 / Francuski Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
cena:
311,12 zł |
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Rassegna dei MOSFET non convenzionali
ISBN: 9786206030461 / Włoski Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
cena:
311,12 zł |
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Spread Spectrum System
ISBN: 9783846597460 / Angielski / Miękka / 2012 / 56 str. Termin realizacji zamówienia: ok. 13-18 dni roboczych. A major issue of concern in the study of digital communication is to provide a form of secure and interference free communication system in a hostile environment. This requirement is catered by a class of signaling techniques known as SPREAD SPECTRUM MODULATION. In this technique the transmitted signal spectrum is spread over a frequency range much greater than the message bandwidth . The spectrum is accomplished before the transmission through the use of code that is independent of data sequence. The same code is used in the receiver (operating synchronously with the transmitter) to...
A major issue of concern in the study of digital communication is to provide a form of secure and interference free communication system in a hostile ...
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cena:
253,29 zł |
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Channel And Gate Engineered Double Gate MOSFET
ISBN: 9783659564796 / Angielski / Miękka / 2014 / 96 str. Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
cena:
257,93 zł |