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wyszukanych pozycji: 7
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Fowler-Nordheim Field Emission: Effects in Semiconductor Nanostructures
ISBN: 9783642204920 / Angielski / Twarda / 2012 / 338 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. It covers a wide range of different technologically important electronic compounds, and contains 200 open research problems.
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. It covers a wide range of diffe...
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cena:
585,00 zł |
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Bismuth: Characteristics, Production & Applications
ISBN: 9781614706403 / Angielski / Twarda / 2012 / 293 str. Termin realizacji zamówienia: ok. 22 dni roboczych. Presents the different physical properties of bismuth for researchers and engineers, post-graduate students, professionals in the fields of solid state science, nanoscience and technology and nanostructure thermodynamics in addition to materials science.
Presents the different physical properties of bismuth for researchers and engineers, post-graduate students, professionals in the fields of solid stat...
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cena:
1017,25 zł |
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Fowler-Nordheim Field Emission: Effects in Semiconductor Nanostructures
ISBN: 9783642445156 / Angielski / Miękka / 2014 / 338 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of...
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are qu...
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cena:
585,00 zł |
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Effective Electron Mass in Low-Dimensional Semiconductors
ISBN: 9783642438646 / Angielski / Miękka / 2014 / 536 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in...
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear opt...
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cena:
585,00 zł |
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Effective Electron Mass in Low-Dimensional Semiconductors
ISBN: 9783642312472 / Angielski / Twarda / 2012 / 536 str. Termin realizacji zamówienia: ok. 20 dni roboczych. This book examines the effective electron mass in nanodevices, explaining changes in band structure of optoelectronic semiconductors, and offering insight into electronic behavior in doped semiconductors and nanostructures. Includes 200 problems and questions.
This book examines the effective electron mass in nanodevices, explaining changes in band structure of optoelectronic semiconductors, and offering ins...
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cena:
585,00 zł |
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Einstein Relation in Compound Semiconductors and Their Nanostructures
ISBN: 9783540795568 / Angielski / Twarda / 2008 / 458 str. Termin realizacji zamówienia: ok. 20 dni roboczych. In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi s, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting...
In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimenta...
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cena:
585,00 zł |
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Einstein Relation in Compound Semiconductors and Their Nanostructures
ISBN: 9783642098499 / Angielski / Miękka / 2010 / 458 str. Termin realizacji zamówienia: ok. 20 dni roboczych. In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi s, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting...
In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimenta...
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cena:
585,00 zł |
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