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Germanium as a replacement for Silicon in MOS devices, offers a higher electron (2x) and hole (4x) mobility than Si. A Ge channel MOS technology has been expected to be implemented into future high-speed Si platform, because of the enhanced carrier transport. The poor quality of the native oxide (GeO2) however hampered the use of this material in large scale production. One potential solution is the use of Rare-earth oxides (REOs) such as CeO2, La2O3, Dy2O3, Gd2O3, which can be directly deposited on Ge-substrates. The reliability characteristics of these CMOS devices on Ge-substrates are of...

This book will provide information about the mechanism of P solubilization and heavy metal tolerance of rhizobacteria. In addition, this book have sufficient information about previous experiments conducted on P solubilization and heavy metal tolerance of bacteria throughout the world. This book could be very helpful for them who are interested to learn about bacterial isolation techniques, bacterial media preparation and their physical and chemical characterization procedures which has been well depicted in this book. A chapter of this book have shown the effect of P solubilizing bacteria on...