Wyniki wyszukiwania:

Plasma based transfer of photoresist (PR) patterns using 193nm PR films usually suffer from high removal rates and excessive surface and line edge roughness. The effects of process time, PR material, bias and source power, pressure and gas chemistry were studied. Polymer destruction in the top surface, oxygen and hydrogen loss along with fluorination were observed for all materials initially, which was followed by steady state etch conditions. A strong dependence of plasma-induced surface chemical and morphological changes on polymer structure was observed. In particular, the adamantane...