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So far a detailed study on Heterojunction Bipolar Transistor made of Inp/InGaAs with nearly Gaussian Base doping profile, has not been done .Because of that a detailed study on Inp-InGaAs HBT is presented in this work. Two important factors for determining the performance of a transistor are base transit time and current gain ( ). Variations of base transit time and gain with temperature and other device parameters for both uniform and non-uniform base doping profiles are studied here. The non-uniform base doping profile studied here is nearly Gaussian in nature. Dependence of diffusion...

Working physicists, especially astrophysicists, value `back-of-the-envelope' calculations - short elegant computations or arguments that start from general principles and lead to interesting results. This book guides advanced undergraduates and lower graduates on how to understand astrophysics using general principles and concise calculations.

Working physicists, especially astrophysicists, value `back-of-the-envelope' calculations - short elegant computations or arguments that start from general principles and lead to interesting results. This book guides advanced undergraduates and lower graduates on how to understand astrophysics using general principles and concise calculations.