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Quantum dot infrared photodetectors (QDIPs) have emerged as a promising technology in the mid- and far-infrared (3-25 μm) for applications in medical and environmental sensing. In this book, a detailed theoretical model based on non-equilibrium Green's functions (NEGF) has been developed to electrically and optically characterize different QDIP structures. The advantage of the model over previous developed classical and semi-classical models is that it fairly describes quantum transport phenomenon playing a significant role in the performance of such nano-devices and considers the...

The purpose of this work to study the porous silicon and fabricate optical sensor based on optimum parameters of PS, chapter one explan the history of PS, chapter two displayed the physical properties of PS and study the Electrochemical etching of porous silicon, Electrical and Photoelectrical Properties, Rapid Thermal Annealing techniques process, and Applications of Porous Silicon. chapter three explain the sample preparation and experiment methodology. chapter four was the characterization of PS using FESEM, AFM, XRD, and Photoluminescence studies before and after annealing, finally PS...