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wyszukanych pozycji: 8
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Zinc Oxide Nanostructures: Advances and Applications
ISBN: 9789814411332 / Angielski / Twarda / 2014 / 232 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100 C) and low-temperature (under 100 C) approaches to synthesizing ZnO nanostructures; device applications for technical and medical devices, light-emitting diodes, electrochemical sensors, nanogenerators, and photodynamic therapy; and the concept of self-powered devices and... Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic d... |
cena:
559,80 |
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Scaling and Integration of High-Speed Electronics and Optomechanical Systems
ISBN: 9789813225398 / Angielski / Twarda / 2017 / 152 str. Termin realizacji zamówienia: ok. 30 dni roboczych (Bez gwarancji dostawy przed świętami) Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS
Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology,...
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cena:
506,25 |
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High Temperature Electronics
ISBN: 9780412625107 / Angielski / Twarda / 1996 / 322 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth....
There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability....
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cena:
806,99 |
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Low Temperature Chemical Nanofabrication: Recent Progress, Challenges and Emerging Technologies
ISBN: 9780128133453 / Angielski / Miękka / 2020 / 416 str. Termin realizacji zamówienia: ok. 30 dni roboczych (Bez gwarancji dostawy przed świętami) |
cena:
686,36 |
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ZnO Nano-Structures for Biosensing Applications: Molecular Dynamic Simulations
ISBN: 9781617282805 / Angielski / Miękka / 2011 / 56 str. Termin realizacji zamówienia: ok. 30 dni roboczych (Bez gwarancji dostawy przed świętami) ZnO nanostructure is central for many nanotechnology applications, such as chemical and biological sensors. This book uses ZnO nanotubes to study the permeation of water for equilibrium and applied voltage cases illustrate the influence of the surface topography and the intermolecular parameters and surface charges on permeation kinetics.
ZnO nanostructure is central for many nanotechnology applications, such as chemical and biological sensors. This book uses ZnO nanotubes to study the ...
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cena:
251,02 |
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High Temperature Electronics
ISBN: 9781461285083 / Angielski / Miękka / 2011 / 322 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth....
There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability....
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cena:
887,69 |
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Compound Semiconductors Strained Layers and Devices
ISBN: 9781461370000 / Angielski / Miękka / 2014 / 337 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were...
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady acc...
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cena:
605,23 |
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Compound Semiconductors Strained Layers and Devices
ISBN: 9780792377696 / Angielski / Twarda / 2000 / 337 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not...
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady acc...
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cena:
605,23 |
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