Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

ISBN-13: 9789811371066 / Angielski / Twarda / 2019 / 147 str.

Kazuto Akiba

Spis treści

General Introduction.- Experimental Methods.- Black Phosphorus.- Lead Telluride.- Concluding Remarks.

O autorze

Kazuto Akiba has been an Assistant Professor at Okayama University since April 2018. His work mainly involves experimental investigation of the physical properties of materials under extreme conditions (high pressures, high magnetic fields and low temperatures). He received his Bachelor of Science from Nagoya University, and his Master and Doctor of Science from the University of Tokyo in 2013, 2015 and 2018, respectively. He received a research fellowship for young scientists from the Japan Society for the Promotion of Science (JSPS) for the period 2016 to 2018, and was awarded the School of Science Research Award (PhD) by the University of Tokyo in 2018.

Blurb

This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).

The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.

The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.