topmenu
Wyniki wyszukiwania:
wyszukanych pozycji: 6
 |
Semiconductor Process Reliability in Practice
ISBN: 9780071754279 / Angielski / Twarda / 2012 / 624 str. Termin realizacji zamówienia: ok. 16-18 dni roboczych (Bez gwarancji dostawy przed świętami) Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in... Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice... |
cena:
796,29 zł |
 |
Advanced Semiconductor Device Physics and Modeling
ISBN: 9780890066966 / Angielski / Twarda / 1994 / 520 str. Termin realizacji zamówienia: ok. 16-18 dni roboczych (Bez gwarancji dostawy przed świętami) This reference provides detailed information on semiconductor physics and modelling.
This reference provides detailed information on semiconductor physics and modelling.
|
cena:
747,46 zł |
 |
Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction
ISBN: 9780412146015 / Angielski / Twarda / 1998 / 349 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all...
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectru...
|
cena:
605,23 zł |
 |
Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction
ISBN: 9781461374732 / Angielski / Miękka / 2012 / 349 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all...
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectru...
|
cena:
605,23 zł |
 |
Semiconductor Device Physics and Simulation
ISBN: 9780306457241 / Angielski / Twarda / 1998 / 336 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect...
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-sca...
|
cena:
605,23 zł |
 |
Semiconductor Device Physics and Simulation
ISBN: 9781489919069 / Angielski / Miękka / 2013 / 336 str. Termin realizacji zamówienia: ok. 22 dni roboczych (Bez gwarancji dostawy przed świętami) The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect...
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-sca...
|
cena:
645,58 zł |
Czytaj nas na:
Zobacz: Księgarnia Czeska | Wydawnictwo Książkowe Klimaty | Mapa strony | Lista autorów
KrainaKsiazek.PL - Księgarnia Internetowa
KrainaKsiazek.PL - Księgarnia Internetowa
