wyszukanych pozycji: 4
Ferroelectric Random Access Memories: Fundamentals and Applications
ISBN: 9783642073847 / Angielski / Miękka / 2010 / 291 str. Termin realizacji zamówienia: ok. 20 dni roboczych. In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of... In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation,... |
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cena:
1170,03 zł |
Ferroelectric Random Access Memories: Fundamentals and Applications
ISBN: 9783540407188 / Angielski / Twarda / 2004 / 291 str. Termin realizacji zamówienia: ok. 20 dni roboczych. In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of... In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation,... |
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cena:
1170,03 zł |
La Reflexión de un Samurái KANGAERU. Vol II
ISBN: 9781677088799 / Hiszpański / Miękka / 2019 / 600 str. Termin realizacji zamówienia: ok. 13-18 dni roboczych. |
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cena:
96,32 zł |
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
ISBN: 9789811512148 / Angielski / Miękka / 2021 / 425 str. Termin realizacji zamówienia: ok. 20 dni roboczych. |
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cena:
585,00 zł |